advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low on-resistance r ds(on) 9.5m rohs compliant & halogen-free i d 44a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data & specifications subject to change without notice total power dissipation 29.7 1 storage temperature range operating junction temperature range -55 to 150 -55 to 150 total power dissipation 16.2 thermal data parameter 201103281 gate-source voltage + 20 continuous drain current 3 18.2 continuous drain current continuous drain current 3 14.6 pulsed drain current 1 160 parameter rating drain-source voltage 30 AP0803GMP-HF 5 halogen-free product 44 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the efsop-8 (exposed pad so-8) package is widely preferred for commercial-industrial surface mount applications and exposed backside design is compatible with pmpak ? 5x6. s s s g d d d d efsop-8 d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 9.5 m ? v gs =4.5v, i d =20a - - 13 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 35 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 6 9.6 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 7.5 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 -18- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 620 1000 pf c oss output capacitance v ds =15v - 230 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf r g gate resistance f=1.0mhz - 2.8 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 20 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test 4.starting t j =25 o c , v dd =25v , l=0.1mh , r g =25 , i as =18a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 60 o c/w at steady state. AP0803GMP-HF
a p0803gmp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 7 8 9 10 11 12 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua
AP0803GMP-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = pdm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v 0 200 400 600 800 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 20 40 60 80 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c operation in this area limited by r ds(on)
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